Presentation Information
[1P40]Electron transport properties of SiC nanoribbons under different spin configurations
*Muhammad Hassan1, Akira Sumiyoshi1, Ranferi Cancino Betancourt1, Shota Sato1, Jun Nakamura1 (1. Graduate School of Informatics and Engineering, The University of Electro-Communications)
This study employs first-principles calculations based on DFT in combination with the NEGF method to investigate the electron transport properties of zigzag silicon carbide nanoribbons (ZSiCNRs). Given that the zero-band gap of graphene limits its applications, ZSiCNRs presents a viable substitute because of their broad band gap and magnetic edge states. Electron transport under four possible distinct spin configurations was examined in this study. One of these configurations, ferromagnetic (FM) edges with an antiferromagnetic (AFM) junction, selectively filters spin-up and spin-down electrons in opposite directions of bias voltage, functioning as a dual spin filter. While in other configurations, the spin-filter effect ranges from partial to absent. These findings demonstrate the promise of ZSiCNRs for application in spintronic devices, where quantum conductance can be efficiently controlled by spin configurations.