Presentation Information
[2F10][Withdraw] Epitaxial Crystalline Honeycomb SiN Layer on SiC(0001)
*Jo Onoda1, Hiroshi Ando2, Robert Wolkow3, Jason Pitters4, Takeshi Nakagawa5, Anton Visikovskiy5, Satoru Tanaka5 (1. University of Teacher Education Fukuoka, 2. Photon Science Innovation Center, 3. University of Alberta, 4. National Research Council of Canada, 5. Kyushu University)
SiC substrates have been extensively studied for power device applications due to their wide-bandgap semiconductor properties. Silicon oxynitride (SiON) ultrathin films epitaxially grown on SiC substrates are particularly notable for their large bandgap (8.3 eV) and chemical stability. In this study, we successfully developed a method to epitaxially grow an ultrathin SiN film on SiC(0001), structurally identical to the SiN layer within SiON films. The outermost surface of this SiN film exhibits a honeycomb lattice arrangement of silicon dangling bonds, suggesting the potential for graphene-like physical properties. Structural analyses performed using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) confirmed the distinctive honeycomb arrangement of Si atoms at the surface.