Presentation Information
[2P23]Effects of ion irradiation on inner potential evaluation for PN junctions by Auger electron spectroscopy
*Fuyuki Nabeshima1, Konomi Ikita1, Noboru Taguchi1, Tatsuya Uchida1, Kazushiro Yokouchi1, Akihiro Tanaka1, Toshiyuki Ohama1, Kenichi Tsutsumi1 (1. JEOL Ltd.)
We investigated effects of ion irradiation on the sample surface on the results of inner potential analysis of PN junctions by an Auger microprobe. Ion irradiation reduced the energy difference between the Si KLL Auger peaks of the P-type and N-type regions, and the energy difference decreased as the ion acceleration voltage increased. This indicates that measurements of ion-irradiated surfaces tend to underestimate the internal potential of the PN junction. Moreover, broadening of Si KLL peak was observed in the ion-irradiated surface, possibly because of disorder in crystal structure induced by irradiated ions. In spite of these effects, the energy difference between the Si KLL peaks of the p-/n-type regions remained detectable for irradiation with acceleration voltages up to 3 kV, allowing for differentiation between p-type and n-type regions.