Presentation Information
[2P25]Uniform epitaxial growth of SiON on SiC and formation of new emission defects
*Yasuaki Miyakawa1, Satoru Ichinokura2, Toru Hirahara1 (1. Department of Physics, Institute of Science Tokyo, 2. National Institute for Materials Science (NIMS))
Controlling single-photon emitters (SPEs) at the amorphous SiO2/SiC interface is challenging. In contrast, silicon oxynitride (SiON) forms a stable, periodic structure, making it a promising but unexplored platform. We investigated a SiON/SiC heterostructure formed by annealing a 6H-SiC(0001) substrate in nitrogen after hydrogen etching. The resulting film was atomically flat, confirmed by atomic force microscopy, and exhibited a distinct √3×√3-R30° periodic pattern in reflection high-energy electron diffraction. Photoluminescence measurements revealed a previously unreported, sharp emission peak at 606 nm with a full width at half maximum of 2.1 nm. This highly monochromatic emission from a structurally ordered SiON/SiC interface suggests the formation of new, uniform SPEs.