Presentation Information
[2P30]Dependence on thicknesses of thin films in experimental determination of effective attenuation lengths of photoelectron in silicon oxide
*Motoyasu Imamura1 (1. RI Meas Anal Instrum, AIST)
Attenuation length (AL) of the photoelectrons is important for the quantitative analysis of x-ray photoelectron spectroscopy (XPS). Inelastic mean free path (IMFP) has been used as AL for a long time because of the predictive formula TPP-2M. Recently effective attenuation length (EAL) has been proposed as the AL from a viewpoint of the practical analyses. In this study, EAL in silicon oxide was determined experimetally from the XPS spectra of silicon oxide thin film using synchrotron radiation (SR).