Presentation Information
[2P51]Possibility of Mo film growth by a hydrogen reduction deposition of molybdenum oxide (MoO3)
*Riku Kamei1, Ryosuke Nishio1, Naoki Fukumuro1, Shinji Yae1, Naoki Yamada2, Hirokazu Izumi2, Fumiya shoji3, Shin-ichi Honda1 (1. University of Hyogo, 2. Hyogo Prefectural Institute of Technology, 3. Kyushu Kyoritsu University)
In recent years, research into very thin monolayer or few-layer materials has been intensively investigated. Transition metal dichalcogenides (TMDCs), in particular, have a band gap and are therefore expected to be used in the semiconductor field. We aim to fabricate large-area TMDC thin films using a novel deposition method that replaces conventional chemical vapor deposition (CVD). Specifically, we are investigating the possibility of growing high-quality MoSe2 thin films using the simultaneous irradiation method (hereafter referred to as SIM) of molybdenum-oxide molecules and atomic hydrogen. In this study, the composition of thin films grown using SIM was characterized by photoelectron spectroscopy (XPS). Furthermore, the microstructure of the thin films was characterized by high-resolution transmission electron microscope (TEM), and the composition of local regions of the thin films was characterized by scanning TEM(STEM)- energy dispersive X-ray spectroscopy (EDS).