Presentation Information
[2P52]Control of plasma etching shape of insulating materials by backside electrode geometry
*Toshitaka Kubo1, Chikatsu Iwase2, Ryo Kanou2, Shouta Shiba2, Tetsuo Shimizu2 (1. National Institute of Advanced Industrial Science and Technology (AIST), 2. Sanyu Co., Ltd.)
In summary, we measured the plasma etching shape of insulating materials by different backside electrode geometries. The etching profile can be controlled by using different backside electrode geometries.