Presentation Information
[3D07]Formation of a step/terrace structure of Si(111) on SiO2 by wet chemical treatment
*Mizuma Uno1, Ryuto Hashimoto1, Kouji Inagaki1, Kenta Arima1 (1. Graduate School of Engineering, The University of Osaka)
We propose a method for thinning bulk silicon using a sequence of five wet chemical processes. Ultimately, we aim to obtain the Si atomic-thick ribbon, a two-dimensional silicon material that is hydrogen-terminated on both sides and has a controllable width. This is expected to exhibit properties superior to those of bulk silicon and may be applicable to a variety of devices. To achieve this, we are attempting to fabricate a step/terrace structure, which is a staircase structure of silicon, by etching a slightly tilted Si(111) surface with a specific solution. When this structure is formed adjacent to the SiO2 layer, the bottom terrace can correspond to a single bilayer of Si(111). This monolayer is thought to have the potential to become the Si atomic-thick ribbon through further processing. In this report, we show the results of observing and evaluating a step/terrace structure using an atomic force microscope after creating it on an SOI(Silicon on Insulator) wafer.