[3D06-09] Semiconductor/Magnetic, Electronic, and Photonic devices/Electronic Material Processing (EMP/MI/MS)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[3D08] Study on the gate length dependence of InGaAs-HEMT device operation using extended free energy model

*Haruto Nakamura¹, Yotaro Machida², Ryunosuke Nagaoka², Issei Watanabe³, Masato Kotsugi², Hirokazu Fukidome¹ (1. Tohoku University, 2. Tokyo University of science, 3. National Institute of Information and Communications Technology)

To advance UHF devices for Beyond 5G, we propose a novel device analysis method that integrates the extended free energy framework with PH. In this study, we applied this novel method to InGaAs-HEMTs by using PH to analyze the microscopic potential inside the device, and relating it to macroscopic device performance through the extended free energy term, ℏ× f_T. As a consequence, we successfully revealed short-channel effects from a new physical perspective. Our study demonstrates the potential of this bidirectional framework as a powerful tool for future UHF transistor design.

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