Presentation Information
[3E12]Observation of surface-state transport by Mn doping into a topological crystalline insulator SnTe thin film
*Yoshihiro Fukushima1, Satoru Ichinokura1,2, Taisuke Sasaki2, Toru Hirahara1 (1. Institute of Science Tokyo, 2. National Institute for Materials Science)
Mn doping in SnTe(111) acts as electron doping, shifting the Dirac point toward the Fermi level and preventing the bulk valence band of this p-type semiconductor from crossing it. Temperature-dependent transport measurements confirm that Mn-doped SnTe exhibits insulating behavior. Hall measurements reveal nonlinear Hall resistance attributed to surface states, with clear hysteresis observed at 3.5 K, indicating the emergence of out-of-plane ferromagnetism. At around 20 K, cusp- or dip-like features appear in the high-field Hall response (|B| > 0.4 T), suggesting complex magnetic behavior. These features resemble those seen in topological Hall effects caused by skyrmions. The system satisfies key conditions for skyrmion formation, including strong spin–orbit interaction and broken inversion symmetry at the surface. These findings demonstrate, for the first time, the experimental realization of topological surface-state transport originating from multiple ideal Dirac cones in Mn-doped SnTe.