Presentation Information
[3G08][Withdraw] Mineral Interface Doping
*Roman Konoplev-Esgenburg1 (1. Karlsruhe Institute of Technology)
This work explores Mineral Interface Doping: a safer alternative that offers a simple, reproducible, and industry-relevant approach to doping without hazardous chemicals. MID is an incipient method based on the deposition of a mineral containing the dopant of interest on a silicon wafer, followed by a rapid thermal annealing (RTA) step. MID can utilize a variety of minerals, that effectively form metal silicates in contact with silicon oxide. For this specific application, a mineral should consist of three components: a metal ion (K+, Mg2+, Ce3+, …), element that can be a source of electrons or holes in silicon bulk (such as P, As, B, etc) and oxygen/chlorine components. The proposed method uses ultra-thin films of minerals, such as hydroxyapatite, applied via the T-BAG process and activated by rapid thermal annealing (RTA). IR and EIS analyses confirm that phosphorus diffuses through native silicon oxide and into the silicon, altering its electrical properties.