[1A04-09] Probe Microscopy 

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[1A04] Analysis of individual trap levels at semiconductor interfaces using dissipation force microscopy

Takahiro Ono¹, Mizuki Ohashi², Tomohiro Shigeno¹, Yutaro Uchida¹, Yuuki Yasui¹, Koji Kita¹, *Yoshiaki Sugimoto¹ (1. Graduate School of Frontier Sciences, The University of Tokyo (Japan), 2. Graduate School of Engineering, The University of Tokyo (Japan))

To overcome the limitations of spatially averaged conventional measurements, we developed a dissipation-based AFM technique to visualize and isolate individual interface states at SiO₂/SiC interfaces with nanometer resolution. Combined with finite-element electrostatic simulations, this approach successfully quantified the energy levels of individual fast-responding traps, proving that high-density states still persist near the conduction-band edge even after nitridation.

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