[1A04-09] Probe Microscopy 

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[1A07【依頼講演】] Electrical Characterization and Control of Silicon Surface Atomic Structures by Two-probe STM

*Jo Onoda¹, Ali Khademi², Lucian Livadaru³, Robert Wolkow³, Jason Pitters⁴ (1. University of Teacher Education Fukuoka (Japan), 2. Sharif University of Technology (Iran), 3. University of Alberta (Canada), 4. National Research Council Canada (Canada))

Multi-probe scanning tunnelling microscopy (STM) is a powerful technique for investigating local electrical transport at the nanoscale. Compared with conventional four-probe measurements, two-probe STM enables simpler probe positioning and probe separations down to approximately 30 nm, making it well suited for atomic-scale electrical studies. We established reproducible Ohmic contacts between an STM tip and Si(111) surface nanostructures, allowing quantitative measurements of surface-state conductivity, sheet resistance, and electrical transport through atomically fabricated nanostructures. We then extended this technique to hydrogen-terminated Si(100) surfaces and demonstrated electrical control of dangling-bond structures by minority-carrier injection. These studies establish two-probe STM as a versatile platform for both electrical characterization and active control of atomic-scale surface electronic states.

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