[1B01-05] Sputtering and Plasma Processes 

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[1B04] Enhancement of argon entrapment into hafnium thin films by tantalum addition

*Tomoaki Osumi¹, Yasuhito Gotoh¹ (1. Kyoto University (Japan))

Argon (Ar) concentrations in hafnium (Hf), tantalum (Ta), and hafnium tantalum (HfTa) thin films prepared by rf magnetron sputtering were investigated. The composition of the films together with the Ar concentration was evaluated by Particle Induced X-ray Emission (PIXE). The Ar concentration increased as the Ta ratio (Ta/(Ta+Hf)) increased and exhibited maximum when the Ta ratio was between 0.2 and 0.3. The maximum value was 0.3 at%. Then, the Ar concentration decreased for further increase of the Ta ratio. It was found that the Ar entrapment in the Hf-rich HfTa films was about three times that in the Hf films. This increase cannot be explained by the composition of the constituents that have different entrapment probabilities. It is considered that other factors besides compositions also affect the Ar entrapment.

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