Presentation Information
[1C04]Anomalous Hall effect and interfacial magnetic state in compositionally-graded Ru-substituted (La, Sr)MnO3 films
*Yuto Abiko1, Kenichi Kaminaga1, Takayasu Hanashima2, Kazuhiro Akutsu-Suyama2, Shingo Maruyama1,3, Hiroyuki Aoki4,5, Yuji Matsumoto1 (1. Department of Applied Chemistry, Tohoku University (Japan), 2. Neutron Science and Technology Center, CROSS (Japan), 3. Department of Electronics and Materials Science, Shizuoka University (Japan), 4. J-PARC Center, Japan Atomic Energy Agency (JAEA) (Japan), 5. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) (Japan))
The anomalous Hall effect (AHE) is sensitive to magnetization and spin-dependent scattering in ferromagnets. We recently have found that Mn-site Ru-substituted (La2/3Sr1/3)MnO3 films with linear Ru concentration gradients show saturated ρAHE values different from those of uniformly doped films with the same average Ru concentration. Here, we used polarized neutron reflectometry (PNR), which is powerful to examine how the AHE response is related to the depth-resolved magnetic state. PNR analysis revealed suppressed magnetization near both the film surface and the substrate interface. The magnetic moment near the substrate interface was larger in the DOWN film (Ru 10 → 0%) than in the UP film (Ru 0 → 10%), and was comparable to that of the uniformly doped Ru5% film. These results suggest that the AHE response cannot be explained solely by the average Ru concentration, but is also closely related to the Ru depth profile and the resulting magnetization distribution.
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