[1C01-10] Thin Film (TF)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[1C06] Thickness dependence of electronic and crystal structures in VO₂ (110)_R ultrathin films via in situ photoemission spectroscopy

*Seitaro Inoue¹, Daisuke Shiga^1,2, Ryotaro Hayasaka¹, Kenichi Ozawa², Hiroshi Kumigashira^1,2 (1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University (Japan), 2. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (Japan))

VO₂ is a promising candidate as a channel material for future Mott transistors since it exhibits an abrupt metal-insulator transition (MIT) near room temperature accompanied by V-V dimerization. It is crucial to obtain information on the dimerization-orientation-dependent characteristics of nanostructured VO₂ for designing VO₂ channel layers with tailored performance but the thickness dependence of this orientation remained unclear. Thus, we designed thickness-controlled VO₂ (110)_R ultrathin films and demonstrated that VO₂ (110)_R in the two-dimensional limit exhibits a Mott insulating nature without V-V dimerization, as a result of the dominance of Mott instability. This result provided insight into the relationship between the geometric arrangement of the V-V dimerization axis and the transition instability.

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