[1C01-10] Thin Film (TF)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[1C07] Layer-selective observation of interface-induced phase transition in VO₂/W:VO₂ bilayers via in situ soft-x-ray photoemission spectroscopy

*Daisuke Shiga^1,2, Seitaro Inoue¹, Tatsuhiko Kanda¹, Naoto Hasegawa¹, Miho Kitamura², Koji Horiba², Kohei Yoshimatsu¹, Andrés Felipe Santander-Syro³, Hiroshi Kumigashira^1,2 (1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University (Japan), 2. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (Japan), 3. Universite Paris-Saclay, French National Centre for Scientific Research, Institut des Sciences Moleculaires d'Orsay (France))

VO₂ exhibits a metal-insulator transition, and when a VO₂ layer forms an interface with the metallic V_0.99W_0.01O₂ layer, it becomes metallic below its intrinsic transition temperature through an interface-induced collective phase transition. We investigated this interface-induced metallic state in the VO₂ layer by layer-selective in situ soft-x-ray photoemission and x-ray absorption spectroscopy. The photoemission spectra show metallic behavior in the VO₂ layer, whereas O K-edge x-ray absorption spectra show disappearance of the characteristic feature associated with V-V dimerization. These results indicate that the upper monoclinic insulating VO₂ layer transforms into the rutile metallic phase by forming the heterointerface.

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