[1C01-10] Thin Film (TF)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[1C08] Development of microfabricated thin-film-based thermoelectric devices toward IoT applications

*Isao Ohkubo^1,3, Masayuki Murata², Akihiko Ohi¹, Mariana S. L. Lima^1,3, Kenneth Magallon Senados^1,3, Nicha Hirankarn^1,3, Takashi Aizawa¹, Takeaki Sakurai³, Takao Mori^1,3 (1. National Institute for Materials Science (NIMS) (Japan), 2. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 3. University of Tsukuba (Japan))

Microfabricated thermoelectric devices composed of p-type Mg₂Sn-based thermoelectric semiconductor and n-type Bi layers have been developed. Achievements in the successful operation of a highly reliable thermoelectric device were realized. A microfabricated thin-film-based thermoelectric device, containing 36 p-n pairs (71 π junctions) in a 12 mm square device region, generated a relatively high output voltage of 0.58 V and a high output power density of 21 mW·cm⁻². Successful demonstration of microfabricated thin-film-based thermoelectric devices paves the way toward novel thermoelectric applications for self-powered Internet of Things (IoT) devices and systems, and applications involving the effective utilization of the waste thermal energy generated from high heat density during the operation of electronic devices and systems.

Password required to view