[3B01-11] Low-dimensional Material / Nanostructure / Nanomaterial (LD/NS/NM))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[3B09] Electron Beam-Induced Carrier Modulation in Suspended GaSe Devices

*Mai Nakashima¹, Jiali Hu¹, Masashi Akabori¹, Takato Yokoo¹, Yukiko Yamada-Takamura¹, Kohei Aso¹, Yoshifumi Oshima¹ (1. Japan Advanced Institute of Science and Technology (Japan))

Recently, electron beam irradiation has been proposed to improve the contact resistance at electrode/2D material interfaces. In this study, we investigated electron beam-induced carrier modulation in a suspended gallium selenide (GaSe) channel while avoiding direct irradiation of the metal electrodes. The carrier type and concentration were estimated from the back-gate voltage dependence of the source-drain current. At low irradiation dose, the device has shown p-type behavior, as expected, but after sufficiently increasing the irradiation dose, n-type behavior with increased electron carrier concentration has been observed. This n-type modulation may be attributed to the formation of Ga interstitial-related donors induced by electron beam irradiation. Therefore, local carrier modulation in the GaSe channel can reduce the contact resistance effectively by narrowing the depletion region of the Schottky barrier.

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