Session Details
[3B01-11]Low-dimensional Material / Nanostructure / Nanomaterial (LD/NS/NM))
Thu. Sep 17, 2026 9:00 AM - 12:15 PM JST
Thu. Sep 17, 2026 12:00 AM - 3:15 AM UTC
Thu. Sep 17, 2026 12:00 AM - 3:15 AM UTC
B: Multi-purpose room 2 (1F)
Chair:Hirokazu Fukidome, Iwao Matsuda
[3B01]Enhanced thermostability and photostability of trace pyrazine incorporated hydrogen boride nanosheets
*Miwa Hikichi1, Jumpei Takeshita2, Junyan Han1, Shin-ichi Ito1, Osamu Oki1,3, Ryuki Tsuji1,3, Akira Hasegawa3, Samuel Jeong4, Yoshikazu Ito3,4, Iwao Matsuda5, Hayato Tsurugi6, Masahiro Miyauchi2,3, Takahiro Kondo1,3,7 (1. Department of Materials Sciences, Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 2. Department of Materials Science and Engineering, School of Materials and Chemical Technology, Institute of Science Tokyo (Japan), 3. Hydrogen Boride Research Center, Tsukuba Institute for Advanced Research, University of Tsukuba (Japan), 4. Department of Applied Physics, Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 5. Institute for Solid State Physics, The University of Tokyo (Japan), 6. Department of Applied Chemistry, Graduate School of Engineering, The University of Osaka (Japan), 7. The Advanced Institute for Materials Research, Tohoku University (Japan))
[3B02]Control of charge transfer at nitrogen-doped graphene catalyst/substrate interfaces as a key factor in modulating oxygen reduction reaction activity
*Shota Sato1, Taichi Takashima1, Syeda Anmol Rida1, Akira Sumiyoshi1, Ranferi Cancino Betancourt1, Naoki Shinyoshi1, Jun Nakamura1 (1. The University of Electro-Communications (Japan))
[3B03]Synthesis and characterization of heteroatom doped rhombohedral boron monosulfide
*Kanta Mori1, Jinyu Li1, Karin Oiwa1, Osamu Oki2,3, Masashi Miyakawa4, Takashi Taniguchi4, Takahiro Kondo2,3,5,6,7 (1. Graduate School of Science and Technology, University of Tsukuba (Japan), 2. Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 3. Hydrogen Boride Research Center, Tsukuba Institute of Advanced Research, University of Tsukuba (Japan), 4. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (Japan), 5. The Advanced Institute for Materials Research (WPI-AIMR), Tohoku University (Japan), 6. Tsukuba Research Center for Energy Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 7. Research Center for Energy and Environmental Materials, National Institute for Materials Science (Japan))
[3B04]Formation and dispersion control of Cu and Ni nanoparticles on hydrogen boride nanosheets
*Myu Kawase1, Natsumi Noguchi1, Shin-ichi Ito2, Miwa Hikichi2, Ryuki Tsuji2, Osamu Oki2,3, Takeshi Fujita4, Ken Sakaushi2,5, Takahiro Kondo2,3,5,6,7 (1. Graduate School of Science and Technology, University of Tsukuba (Japan), 2. Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 3. Hydrogen Boride Research Center, Tsukuba Institute for Advanced Research, University of Tsukuba (Japan), 4. School of Environmental Science and Engineering, Kochi University of Technology (Japan), 5. Research Center for Energy and Environmental Materials, National Institute for Materials Science (Japan), 6. The Advanced Institute for Materials Research, Tohoku University (Japan), 7. Tsukuba Research Center for Energy Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba (Japan))
[3B05【招待講演】]In situ XPS observation of the adsorption and decomposition of amino silane precursors for SiO2 ALD
*Kazuhiko Endo1 (1. Insitute of Fluid Science, Tohoku University (Japan))
Break time
[3B06]Interface design for enhanced hydrogen storage performance of Mg-based materials using Ni-MOF-derived Ni and Ti3C2 MXene
*Kazuki Tabata1, Diya Singh2, Sanket Kutiyar2, Natsumi Noguchi1, Kosei Fukuda1, Osamu Oki3,4, Takahiro Kondo3,4,5,6,7, Sankara Sarma V Tatiparti2 (1. Graduate School of Pure and Applied Sciences, University of Tsukuba (Japan), 2. Department of Energy Science and Engineering, Indian Institute of Technology Bombay (India), 3. Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 4. Hydrogen Boride Research Center, Tsukuba Institute of Advanced Research, University of Tsukuba (Japan), 5. The Advanced Institute for Materials Research (WPI-AIMR), Tohoku University (Japan), 6. Tsukuba Research Center for Energy Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba (Japan), 7. Research Center for Energy and Environmental Materials, National Institute for Materials Science (Japan))
[3B07]Intrinsic current noise due to phonon scattering in carbon nanotubes
*Aina Sumiyoshi1, Takahiro Yamamoto1 (1. Tokyo University of Science (Japan))
[3B08]Demonstration of Monoatomic-Gate-Length MoS2 Transistors using Orthogonal Graphene/MoS2 Heterostacks
Hirai Tanaka1, Fuminori Sasaki1, Qiyue He1, Hideaki Sugino1, Kazuki Yonekubo1, Toshifumi Irisawa2, Naoya Okada2, Akiko Ueda2, Takahiro Iizuka3, Takeo Matsuki4, Daisuke Ohori5, Kazuhiko Endo6, Keisuke Atsumi7, Kosuke Nagashio7, Issei Watanabe8, *hirokazu fukidome1 (1. RIEC, Tohoku Univ. (Japan), 2. AIST (Japan), 3. Hiroshima Univ. (Japan), 4. Univ. Tsukuba (Japan), 5. Kansai Univ (Japan), 6. IFS, Tohoku Univ. (Japan), 7. The Univ. Tokyo (Japan), 8. NICT (Japan))
[3B09]Electron Beam-Induced Carrier Modulation in Suspended GaSe Devices
*Mai Nakashima1, Jiali Hu1, Masashi Akabori1, Takato Yokoo1, Yukiko Yamada-Takamura1, Kohei Aso1, Yoshifumi Oshima1 (1. Japan Advanced Institute of Science and Technology (Japan))
[3B10]In-situ TEM study of MoS2 channel electric field effect using an indirect beam gate
Limi Chen1, Mai Nakashima1, Jiali Hu1, Kohei Aso1, Masashi Akabori1, Kaito Kanahashi2, Kosuke Nagashio2, *Yoshifumi Oshima1 (1. Japan Advanced Institute of Science and Technology (Japan), 2. The University of Tokyo (Japan))
[3B11]Characterizations of 2D Semiconductor-Metal Interfaces by STM
*Chun-Liang Lin1 (1. National Yang Ming Chiao Tung University (Taiwan))