[3B01-11] Low-dimensional Material / Nanostructure / Nanomaterial (LD/NS/NM))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[3B10] In-situ TEM study of MoS₂ channel electric field effect using an indirect beam gate

Limi Chen¹, Mai Nakashima¹, Jiali Hu¹, Kohei Aso¹, Masashi Akabori¹, Kaito Kanahashi², Kosuke Nagashio², *Yoshifumi Oshima¹ (1. Japan Advanced Institute of Science and Technology (Japan), 2. The University of Tokyo (Japan))

A two-terminal MoS₂ nanoribbon device was fabricated on a 50-nm-thick suspended SiN_x membrane for in-situ TEM electrical measurements. Irradiation of a focused electron probe onto the SiN_x membrane 15 µm away from the device increased the drain–source current, indicating an electron-beam-induced gating effect. This behavior is attributed to positive charge accumulation in the SiNx membrane caused by secondary electron emission, which induces negative carriers in the MoS₂ channel. The current showed a rapid increase followed by exponential decay with a time constant of approximately 90 s

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