[3E12-16] Surface Analysis

1:45 PM - 2:15 PM JST(4:45 AM - 5:15 AM UTC)

[3E13【依頼講演】] Effects of Ar-GCIB cluster size on XPS depth-profiling characteristics and Its application to organic/inorganic multilayer analysis

*Tomomi Ohashi¹, Hsun-Yun Chang¹, Shin-ichi iida¹ (1. ULVAC-PHI, Inc. (Japan))

Gas cluster ion beams (GCIBs) are widely used as low-damage sputtering sources for XPS and TOF-SIMS depth profiling of organic materials. However, their low sputtering yield for inorganic materials limits their application to organic/inorganic multilayers. Here, the Ar cluster size was optimized to balance sputtering yield and damage in inorganic, organic, and multilayer materials. For inorganic materials (SiO₂, NiO_x, and TiO₂), smaller clusters increased sputtering yields but also promoted reduction by preferential oxygen sputtering. For organic materials (PET, PMMA, and PI), smaller clusters caused greater preferential sputtering and chemical damage, although PET and PMMA remained suitable for depth profiling. Applied to a perovskite solar cell, Ar₆₀₀⁺ provided sufficient sputtering yields for inorganic and organic layers while minimizing damage, enabling reliable depth profiling. These results provide practical GCIB conditions for inorganic, organic, and hybrid multilayer materials.

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