[3E12-16] Surface Analysis

2:45 PM - 3:15 PM JST(5:45 AM - 6:15 AM UTC)

[3E15【依頼講演】] Chemical state characterization of the buried interface between magnetron-sputtered ZnO films and an Al underlayer using XPS and HAXPES

*Hisao Makino¹ (1. School of System Engineering, Kochi University of Technology (Japan))

Zinc oxide (ZnO) is essential for optoelectronic and sensor applications; the property is strongly dependent on crystallographic polarity. ZnO thin films typically exhibit O-polarity when grown directly on glass. This study demonstrates a method to achieve Zn-polarity by inserting an extremely thin Al underlayer prior to ZnO deposition via RF magnetron sputtering. XPS and HAXPES analysis indicate that the surface of Al underlayer is oxidized during the ZnO deposition process. Comparative tests with Ti and Au suggest that the oxidation of the metal underlayer is the critical factor in determining the polarity of the overlying ZnO. Al-doped ZnO films grown on this Al underlayer exhibit significantly improved electrical conductivity, higher Hall mobility, and increased carrier concentration compared to films grown without the underlayer. The Al underlayer also improves the spatial uniformity of electrical properties without compromising optical transparency.

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