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Session 9: Interfaces and Reliability EngineeringSession 9: Interfaces and Reliability Engineering

[9]Interfaces and Reliability Engineering

Mon. Jun 9, 2025 1:30 PM - 2:55 PM JST
Mon. Jun 9, 2025 4:30 AM - 5:55 AM UTC
Suzaku III(Suzaku III)
Chair:Michele Perego(CNR-IMM, Italy), Toshifumi Irisawa(National Advanced Institute of Science and Technology (AIST))
1:30 PM - 1:55 PM JST(4:30 AM - 4:55 AM UTC)

[9-01]Charge pumping electrically-detected magnetic resonance in Si MOS transistors
— Identification of interface defects and dopant atoms —

*Masahiro Hori1 (1. Shizuoka Univ. (Japan))
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1:55 PM - 2:15 PM JST(4:55 AM - 5:15 AM UTC)

[9-02]O/H Supercritical Fluid Passivation on Stacked Ge0.95Si0.05 Nanosheet nFETs

*Min-Kuan Lin1, Ding-Wei Lin2, Jui-Yu Hsu2, Guan-Hua Chen2, Bo-Hui Yu3, Wei-Jen Chen2, Bo-Wei Huang2, Tao Chou1, Yi-Chun Liu2, Yu-Rui Chen2, Hong-Yi Tu4, Ting-Chang Chang5, C. W. Liu1,2,3 (1. Graduate School of Advanced Tech., National Taiwan Univ. (Taiwan), 2. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 3. Graduate Inst. of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 4. Department of Materials and Optoelectronic Sci., National Sun Yat-Sen Univ. (Taiwan), 5. Department of Physics, National Sun Yat-Sen Univ. (Taiwan))
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2:15 PM - 2:35 PM JST(5:15 AM - 5:35 AM UTC)

[9-03]Total Ionizing Doses Effects on MOSFET, FinFET, and GAAFET after Co-60 Radiation Exposure

*Jing-Lin Zheng1, Dun-Bao Ruan2, Kuei-Shu Chang-Liao1, Shang-Hua Hsu1 (1. National Tsing Hua Univ. (Taiwan), 2. Fuzhou Univ. (China))
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2:35 PM - 2:55 PM JST(5:35 AM - 5:55 AM UTC)

[9-04]Improved Uniformity and Endurance of Ag-based Volatile Memristors via Annealing Engineering

*Yading Yi1,3, Xujin Song1,3, Zhuohua Tang1,3, Shangze Li1,3, Dijiang Sun1,3, Shiyue Song1,3, Yulin Feng2, Zheng Zhou1,3, Peng Huang1,3, Jinfeng Kang1,3, Lifeng Liu1,3 (1. Peking university (China), 2. Beijing Info. Sci. and Tech. Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))
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