[1-1]Vacancy Distribution Theory for Ion-Implanted Target
S. Furukawa, H. Ishiwara(1.Tokyo Institute of Technology)
1970 Conference on Solid State Devices
Sep 21 - Sep 22, 1970The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
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1970 Conference on Solid State Devices
Sep 21 - Sep 22, 1970The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(34)
[1-2]Electron Microscopic Studies of Crystal Defects in Boron and Phosphorus Implanted Silicon
M. Tamura, T. Ikeda, T. Yoshihiro(1.Hitachi Ltd.)
[1-3]Radiation Enhanced Diffusion and It's Application for Device Fabrication
T. Abe, Y. Ohmura, M. Konaka, H. Ohtsubo, M. Kanazawa, K. Koike(1.Tokyo Shibaura Electric Co., Ltd.)
[1-4]A New Phosphorus Diffusion Technology from the Phosphosilicate Glass
T. Okabe, E. Tanikawa(1.Fujitsu Ltd.)
[2-1]Preferential Etching of GaAs and It's Application to Devices
Y. Tarui, Y. Komiya, Y. Harada(1.Electrotechnical Lab.)
[2-2]Vapor Effect on the Impurity Profity Profiles of Vapor Grown GaAs Epitaxial Layers
M. Hirao, H. Nakashima(1.Hitachi Ltd.)
[2-3]Effect of Heat Treatment on Photoluminescence of GaAs and Its Surface Coated with SiO2
H. Nakashima(1.Hitachi Ltd.)
[2-4]Ohmic Contacts to GaP Devices for Use at High Temperatures
H. Nakatsuka, A. J. Domenico, G. Pearson(1.Stanford Electronics Labs.)
[2-5]Correlation of Image Defects with Crystal Defects in Silicon Vidicon
H. Shiraki, J. Matsui, T. Kawamura(1.Nippon Electric Co., Ltd.)
[3-1]Switching Phenomena in Chalcogenide Glass Semiconductor
S. Iizima, M. Sugi, M. Kikuchi, K. Tanaka(1.Electrotechnical Lab., 2.Sophia University)
[3-2]Current Break‐off and "Memory" Effects in SbSI-SnO2 Heterostructure Thin Film
Y. Hamakawa, M. Yoshida(1.Osaka University)
[3-3]Electrical and Optical Properties of PiO2 Semiinsulator-Silicon Junctions
T. Tsutsumi(1.Tokyo Shibaura Electric Co., Ltd.)
[3-4]Silicon Magnetodiode
M. Arai, T. Yamada(1.Sony Corporation)
[3-5]A Diode Integrated High Speed Thyristor
T. Yatsuo, T. Ogawa, K. Morita(1.Hitachi Ltd.)
[4-1]Bulk Negative Resistance Enhanced by Trapping Through Upper Valleys in Semiconductors
Y. Tokumaru, N. Mikoshiba(1.Electrotechnical Lab.)
[4-2]High Power GaAs Traveling-Wave Amplifier
H. Kanbe, K. Kumabe, R. Nii(1.Nippon Telegraph and Telephone Public Corporation)
[4-3]Domain Dynamics in Dielectric Surface Loaded Gunn Devices
M. Kawashima, H. Tateno, S. Kataoka, K. Tomizawa, M. Morisue(1.Electrotechnical Lab., 2.Meiji University, 3.Saitama University)
[4-4]Frequency Dependence of Microwave Mobility of Hot Electron in N-type GaAs
S. Kaneda, M. Abe(1.Osaka University)
[4-5]Electrically Controllable Surface Acoustic Devices
M. Yamanishi, K. Yoshida(1.University of Osaka Prefecture)
[5-1]Structure and Characteristics of Multilayer (GaAs-AlxGa1-xAs) Double Heterostructure Injection Lasers
I. Hayashi, M. B. Panish, P. W. Foy, S. Sumski(1.Bell Telephone Labs.)
[5-2]Internal Q-Switching in Electron Beam Excited Gallium Arsenide Lasers
A. Masuyama, M. Kawabe, K. Masuda, S. Namba(1.Osaka University)
[5-3](Ga･ Al) As PNPN Diodes
S. Yano, T. Sakurai, T. Inoguchi(1.Sharp Corporation)
[5-4]Amorphous Semiconductor Optical Memory Devices
S. Asai, E. Maruyama(1.Hitachi Ltd.)
[5-5]Color Modulator Using Oblique-Cut Strontium-Barium-Niobate Plates
S. Sakamoto, K. Kanatani, T. Yazaki(1.Sanyo Electric Co., Ltd.)
[5-6]High-Efficiency Ge Modulator for Infrared (Laser) Beams
M. Umeno, H. Hattori, S. Miki(1.Nagoya University)
[6-1]Anomalous Low Frequency Noise in MOS Transistors at Low Temperature
M. Nakahara(1.Fujitsu Ltd.)
[6-2]DSA. MOS. IC
Y. Tarui, Y. Hayashi, T. Sekigawa(1.Electrotechnical Lab.)
[6-3]Surface Electron Mobility of Silicon MISFETs with Various Gate Insulator Structures
I. Yoshida, T. Miyazaki, Y. Katayama, N. Kotera(1.Hitachi Ltd.)
[6-4]Anomalous Galvano-Magnetic Effects in Surface Inversion Layer of Semiconductor
Y. Uemura, Y. Matsumoto(1.University of Tokyo)
[6-5]Tunable Infrared Detector Using Photoconductivity of Quantized Electrons in MOS Transistor
Y. Katayama, N. Kotera, K. F. Komatsubara(1.Hitachi Ltd.)
[7-1]New Functional Operations with Avalanche Diode
M. Ohmori, H. Niizuma, Y. Ishii, K. Suzuki(1.Nippon Telegraph and Telephone Public Corporation)
[7-2]Waveguide Encapsulated mm-Wave IMPATT Diode
Y. Toyama, M. Shinoda, Y. Fukukawa, T. Inoue(1.Fujitsu Ltd.)
[7-3]Determination of Intrinsic Response Times of Electrons and Holes from Avalanche Noise Measurements
I. M. Naqvi(1.Honeywell Inc.)
[7-4]A New Microwave Element Composed of YIG and Semiconductor Crystals
K. Kozuka, M. Umeno, S. Miki(1.Nagoya University)
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