[A-1-02] Source-Drain Damage of Monolithic Complementary Field Effect Transistors: A Comprehensive Study of Failure Modes and Mitigation Strategies | 2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

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2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

[A-1-02]Source-Drain Damage of Monolithic Complementary Field Effect Transistors: A Comprehensive Study of Failure Modes and Mitigation Strategies

〇Camila Toledo de Carvalho Cavalcante¹, Steven Demuynck¹, Emmanuel Dupuy¹, Thomas Chiarella¹, BT Chan¹, Pallavi Puttarame Gowda¹, Il Gyo Koo¹, Hans Mertens¹, Anne Vandooren¹, Farid Sebaai¹, Jef Geypen¹, Sujith Subramanian¹, Lucas Petersen Barbosa Lima¹, Serge Biesemans¹, Naoto Horiguchi¹(1. imec, Leuven, Belgium (Belgium))

https://doi.org/10.7567/SSDM.2024.A-1-02

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In this work, we investigate damage incurred on the eSiGe:B bottom source-drain (B-SD) in high-aspect-ratio (HAR) Complementary Field-Effect-Transistors (CFETs). We report on potential solutions enabling an improvement in the survival rate of B-SD eSiGe:B. This work fits the scope of creating the path towards robust CFET flow at tight pitches.

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