[A-1] Advanced CMOS: Process Technology | 2024 International Conference on Solid State Devices and Materials

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Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-1]Advanced CMOS: Process Technology

Mon. Sep 2, 2024 2:30 PM - 4:00 PM JST
Mon. Sep 2, 2024 5:30 AM - 7:00 AM UTC

Room A (407)(4th Floor)

Session Chair: Genji Nakamura (Tokyo Electron Ltd.), Takashi Matsukawa (AIST)

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)Invited

[A-1-01 (Invited)]3D stacked devices and MOL innovations for post-Nanosheet CMOS scaling

〇Steven Demuynck¹、Victor Vega Gonzalez¹、Camila Toledo¹、Karen Stiers¹、Cassie Sheng¹、Andy Peng¹、Dmitry Batuk¹、Maryam Hosseini¹、Anne Vandooren¹、Lucas Lima¹、Naoto Horiguchi¹、Serge Biesemans¹ (1. imec (Belgium))

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[A-1-02]Source-Drain Damage of Monolithic Complementary Field Effect Transistors: A Comprehensive Study of Failure Modes and Mitigation Strategies

〇Camila Toledo de Carvalho Cavalcante¹, Steven Demuynck¹, Emmanuel Dupuy¹, Thomas Chiarella¹, BT Chan¹, Pallavi Puttarame Gowda¹, Il Gyo Koo¹, Hans Mertens¹, Anne Vandooren¹, Farid Sebaai¹, Jef Geypen¹, Sujith Subramanian¹, Lucas Petersen Barbosa Lima¹, Serge Biesemans¹, Naoto Horiguchi¹ (1. imec, Leuven, Belgium (Belgium))

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[A-1-03]Demonstration of Poly Gate Cut Process at Tight Gate Pitch of 50nm and High Gates Aspect Ratio for Advanced Device Architectures

〇Xiuju Zhou¹, Zheng Tao ¹, Hans Mertens¹, Emmanuel Dupuy¹, Anabela Veloso¹, Boon Teik Chan¹, Sujith Subramanian¹, Naoto Horiguchi¹, Serge Biesemans¹, Elisabeth Camerotto², Haseeb Kazi², Ziad El Otell² (1. IMEC (Belgium), 2. Lam Res. Corp. (United States of America))

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[A-1-04]Low-Thermal Budget Activation for 3D Integration by Green Nanosecond Laser

〇Hongxu Liao¹, Yandong Ge¹, Haixia Li¹, Lanyi Xie², Qing Wang¹, Ming Li^1,3, Ru Huang^1,3 (1. School of Integrated Circuits, Peking University (China), 2. Department of Energy and Resources Engineering, Peking University (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[A-1-05]Transferring Compressive or Tensile Stress from Stressors to Si Layers: A Novel Approach

〇Pablo Acosta Alba¹, Mayara Auricchio¹, Patrice Gergaud¹, Jean-Michel Hartmann¹, Shay Reboh¹ (1. Univ. Grenoble ALpes, CEA-LETI (France))

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