Presentation Information
[A-1-03]Demonstration of Poly Gate Cut Process at Tight Gate Pitch of 50nm and High Gates Aspect Ratio for Advanced Device Architectures
〇Xiuju Zhou1, Zheng Tao 1, Hans Mertens1, Emmanuel Dupuy1, Anabela Veloso1, Boon Teik Chan1, Sujith Subramanian1, Naoto Horiguchi1, Serge Biesemans1, Elisabeth Camerotto2, Haseeb Kazi2, Ziad El Otell2 (1. IMEC (Belgium), 2. Lam Res. Corp. (United States of America))