[A-1-04] Low-Thermal Budget Activation for 3D Integration by Green Nanosecond Laser | 2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

Back

2024 International Conference on Solid State Devices and Materials

Sep 1 - Sep 4, 2024Arcrea HIMEJI

[A-1-04]Low-Thermal Budget Activation for 3D Integration by Green Nanosecond Laser

〇Hongxu Liao¹, Yandong Ge¹, Haixia Li¹, Lanyi Xie², Qing Wang¹, Ming Li^1,3, Ru Huang^1,3(1. School of Integrated Circuits, Peking University (China), 2. Department of Energy and Resources Engineering, Peking University (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))

https://doi.org/10.7567/SSDM.2024.A-1-04

Download PDF

Application of green nanosecond laser anneal for low-thermal-budget source/drain (S/D) activation in three-dimensional sequential integration (3DSI) was studied. SiO₂ capping layer suppressed roughness by 90% and reduced energy density by 30% at the same activation effect, and shorter laser pulse can also reduce ED. The multiphysical simulation shows that NLA can meet the thermal budget limit below 500 ℃ for the bottom tier in 3DSI.

Back