2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-2-01]On-Wafer Polarity-Specific Response Plasma Charging Recorder
with Fin-Coupling Structure by FinFET Technology
Han-Lin Huang1, 〇Wei Chang1, Yu-Der Chih2, Jonathan Chang2, Chrong-Jung Lin1, Ya-Chin King1(1. National Tsing Hua Univ. (Taiwan), 2. Taiwan Semiconductor Manufac. Company (Taiwan))
A floating gate (FG) based plasma recorder with well-couple structure is developed using advanced CMOS FinFET processes. In addition to recording the charging level on metal structures, the newly proposed recorder can differentiate positive or negative charging effect by the introduction of a well couple structure. Successful detection of the ion and electron charging levels respectively during plasma process has been first-time demonstrated in this work.