[A-4] Advanced CMOS: Device Technology

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[A-4-01] High Performance (111)-Oriented Extremely-Thin Body Ge-On-Insulator nMOSFETs down to 2.1 nm

〇Xueyang Han¹, Chia-Tsong Chen¹, Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. The University of Tokyo (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.A-4-01

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