2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-4-01]High Performance (111)-Oriented Extremely-Thin Body Ge-On-Insulator nMOSFETs down to 2.1 nm
〇Xueyang Han1, Chia-Tsong Chen1, Kei Sumita1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1(1. The University of Tokyo (Japan))
It is shown that (111)-oriented Ge-on-Insulator (GOI) substrates fabricated by the flipped Smart-Cut method significantly enhance the performance of extremely-thin body GOI nMOSFETs. We demonstrate that a record-thin (111) GOI nMOSFET of 2.1 nm exhibits low SSmin of 70 mV/dec and high Ion/Ioff ratio of 1.1×107 at Vg=2V. Additionally, electron mobility of 201 cm²/Vs and 72 cm²/Vs are obtained in (111) GOI nMOSFETs with channel thicknesses of 6.1 nm and 2.7 nm, respectively. This study highlights the potential of ETB (111) Ge nMOSFETs for a promising substitute channel in future 3D sequential CFETs.