Presentation Information

[A-4-01]High Performance (111)-Oriented Extremely-Thin Body Ge-On-Insulator nMOSFETs down to 2.1 nm

〇Xueyang Han1, Chia-Tsong Chen1, Kei Sumita1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1. The University of Tokyo (Japan))

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