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Determining factors of the Effective Work Function of TiN/TiAlC Metal Gates for Advanced Gate-all-around CMOS Integration

We have examined the determining factor of the effective work function (EWF) in TiN/TiAlC metal gates for NMOSFET. It was found that TiN with low oxygen content has a work function (WF) of 3.8 eV, suitable for NMOSFET although TiN has been believed to be suitable for PMOSFET. We also found that its WF increases with increasing oxygen content. Based on these results, we propose a novel mechanism to explain the EWF for TiN/TiAlC metal gates.

Advanced CMOS: Device Technology

International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

[A-4-05]Determining factors of the Effective Work Function of TiN/TiAlC Metal Gates for Advanced Gate-all-around CMOS Integration