International Conference on Solid State Devices and Materials

In order to further enhance the storage density for emerging memory, the 3D architecture and multi-level functionality are the pathways. The nonidentical thickness of double-HZO (DHZO) with an inserted Al₂O₃ dielectric (DE) is employed to modulate the MW to improve the fault tolerance of readouts. DHZO exhibits a homogenous corner field for the 3D GAA NS FeFET. With superlattice (SL) mode for ferroelectric-phase enhancement to integrate as DHZO will be introduced for the analog operation of multibit and synapses, as well as for comparison with SS-DHZO. This is crucial to achieving analog-based energy-efficient accelerators for synapses in computing in-memory generation.