Presentation Information
[A-5-01 (Invited)]Gate Stack Engineering of Ferroelectric HfZrO2 from Multi-Level Non-Volatile Memory (NVM) to Analog-based Synapse
〇Min-Hung Lee1, Zhao-Feng Luo1, Kuo-Yu Hsing2, Fu-Shen Chang1, Jia-Yang Lee1, Yii-Tay Chang1, Cheng-Hong Liu1 (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))