2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-5-02]Impact of Amorphous TiN Metal-Cap with High Residual Stress on Ferroelectricity of Hf0.5Zr0.5O2 for FeFET Memory with Low Voltage Operation
〇TADASHI YAMAGUCHI1, Shibun Tsuda1, Takahiro Kono1, Yoshiki Yamamoto1, Atsushi Amo1, Kazuyuki Omori1, Seiji Muranaka1, Masao Inoue1(1. Renesas Electronics Corp. (Japan))
Introduction of amorphous TiN (a-TiN) on ferroelectric Hf0.5Zr0.5O2 (HZO) film enhances ferroelectricity and improves
FeFET performance. a-TiN can be uniformly formed by ultra-low deposition rate without crystallization and induces high residual stress (σT) after crystallization annealing for the HZO film. The ferroelectric phase in HZO films increases with increasing σT. As a result, enhancement of remnant polarization (Pr) with low applied gate voltage was confirmed in metal-ferroelectric-metal (MFM) capacitors. Furthermore, the memory window (MW) in FeFETs with a-TiN is larger than that with conventional crystallized TiN. In addition, the local variation of MW reduces due to a-TiN. Large MW can contribute to reducing the operation voltage in FeFET memory.
More than one order of cycles for Program and Erase can be improved. Large stress a-TiN ensures high ferroelectricity of HZO films for FeFET memory with low voltage operation.
FeFET performance. a-TiN can be uniformly formed by ultra-low deposition rate without crystallization and induces high residual stress (σT) after crystallization annealing for the HZO film. The ferroelectric phase in HZO films increases with increasing σT. As a result, enhancement of remnant polarization (Pr) with low applied gate voltage was confirmed in metal-ferroelectric-metal (MFM) capacitors. Furthermore, the memory window (MW) in FeFETs with a-TiN is larger than that with conventional crystallized TiN. In addition, the local variation of MW reduces due to a-TiN. Large MW can contribute to reducing the operation voltage in FeFET memory.
More than one order of cycles for Program and Erase can be improved. Large stress a-TiN ensures high ferroelectricity of HZO films for FeFET memory with low voltage operation.