[A-5] Ferroelectric Devices

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[A-5-02] Impact of Amorphous TiN Metal-Cap with High Residual Stress on Ferroelectricity of Hf0.5Zr0.5O2 for FeFET Memory with Low Voltage Operation

〇TADASHI YAMAGUCHI¹, Shibun Tsuda¹, Takahiro Kono¹, Yoshiki Yamamoto¹, Atsushi Amo¹, Kazuyuki Omori¹, Seiji Muranaka¹, Masao Inoue¹ (1. Renesas Electronics Corp. (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.A-5-02

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