[A-6] Modeling, Simulation and Characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[A-6-02] Comparative Analysis of Cryogenic Threshold Voltage and On-current Variability in 65nm Bulk and FDSOI MOSFETs

〇Zihao Liu¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1. The Univ. of Tokyo (Japan), 2. The National Inst. of Advanced Indus. Sci. and Tech. (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.A-6-02

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