2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-6-02]Comparative Analysis of Cryogenic Threshold Voltage and On-current Variability in 65nm Bulk and FDSOI MOSFETs
〇Zihao Liu1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1(1. The Univ. of Tokyo (Japan), 2. The National Inst. of Advanced Indus. Sci. and Tech. (Japan))
The current and threshold voltage variability for FDSOI and bulk FETs are analyzed and compared at cry-ogenic temperature (CT) and room temperatures (RT). It is found that FDSOI shows more increase in threshold voltage at CT than bulk and that the current variability is degraded in the linear region in FDSOI. The origin for such phenomena is discussed.