2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-6-04]A Correction Method of Split C-V Characteristics in MOSFETs by Using Transmission Line Model for Accurate Extraction of Effective Mobility
〇Zhao Jin1, Yutong Chen1, Xueyang Han1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1(1. The Univ. of Tokyo (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))
We propose a method to correct the influence of channel resistance on split C-V measurements. We use a transmission line model to express the relationship between ideal and measured Cgc values and represent the correct Cgc values by using both capacitance and conductance experimental data. The effectiveness of this correction method is verified by long-channel Si MOSFETs at room and cryogenic temperatures. It is experimentally demonstrated that accurate effective mobility evaluation is realized by using this method.