Presentation Information
[B-3-03]Enhanced Ferroelectric Field Effect Transistor via Interlayer Engineering Featuring Memory Window of 3.6V, Endurance > 109 cycles, and Multi-Level Storage for NAND Memory
〇Jun Lan1, Haoran Peng1, Wenhui Wang1, Zhixiong Li1, Guobiao Zhang1, Mei Shen1, Xuewei Feng2, Jiamin Li1, Feichi Zhou1, Longyang Lin1, Yida Li1 (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China))