2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-3]Ferroelectric Devices

Tue. Sep 3, 2024 9:00 AM - 10:15 AM JST
Tue. Sep 3, 2024 12:00 AM - 1:15 AM UTC
Room B (408)(4th Floor)
Session Chair: Laurent Grenouillet (CEA-Leti), Kouichi Nagai (Fujitsu Semiconductor Memory Solution Ltd.)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)Invited

[B-3-01 (Invited)]HfO2-based Ferroelectric Capacitors for Non-Volatile Memory:
Going from Single Devices to Memory Arrays

〇Ruben Alcala1, Roberto Guido1, Pramoda Vishnumurthy1, Alfred Kersch2, Thomas Mikolajick1, Uwe Schroeder1 (1. NaMLab (Germany), 2. Univ. of Applied Sciences (Germany))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[B-3-02]Unipolar Polarization Switching and High-endurance Operation of HZO/Si Anti-ferroelectric FETs

〇Shin-Yi Min1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1. The Univ. of Tokyo (Japan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[B-3-03]Enhanced Ferroelectric Field Effect Transistor via Interlayer Engineering Featuring Memory Window of 3.6V, Endurance > 109 cycles, and Multi-Level Storage for NAND Memory

〇Jun Lan1, Haoran Peng1, Wenhui Wang1, Zhixiong Li1, Guobiao Zhang1, Mei Shen1, Xuewei Feng2, Jiamin Li1, Feichi Zhou1, Longyang Lin1, Yida Li1 (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Late News

[B-3-04 (Late News)]BEOL Compatible High-reliability La-doped ZrO2 Antiferroelectric Capacitor

〇Jianguo Li1, Junliang Zhou2, Fan Wu2, ChoongHyun Lee1, Yi Zhao1,2 (1. Zhejiang University (China), 2. East China Normal University (China))
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