2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-4-01]High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
〇Nana Sun1, Kazuki Okamoto1, Shinnosuke Yasuoka1, Soshun Doko2, Naoko Matsui2, Toshikazu Irisawa2, Koji Tsunekawa2, Hiroshi Funakubo1(1. Tokyo Tech (Japan), 2. Canon ANELVA Corp (Japan))
The changes in the crystal structure and ferroelectric properties of (Al0.8Sc0.2)N films sandwiched by Pt and TiN electrodes were investigated by post-heat-treatment at various temperatures up to 600 °C under both H2 and Ar gases. The remanent polarization showed slight change, whereas the coercive electric field increased by approximately 9% as a result of the post-heat-treatment up to 600 °C irrespective of the atmosphere and electrode material. This change is much smaller than that reported ones for ferroelectric (Hf,Zr)O2 films as well as for Pb(Zr,Ti)O3 and SrBi2Ta2O9 films for a wide temperature range from 400 to 600 °C and is almost independent of the Pt and TiN electrodes. The high stability of (Al,Sc)N films with both Pt and TiN electrodes under H2 atmosphere is highly promising to stabilize the properties through the various device fablication processes, including ferroelectric memory.