[B-4] Ferroelectric Memory Devices

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[B-4-01] High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

〇Nana Sun¹, Kazuki Okamoto¹, Shinnosuke Yasuoka¹, Soshun Doko², Naoko Matsui², Toshikazu Irisawa², Koji Tsunekawa², Hiroshi Funakubo¹ (1. Tokyo Tech (Japan), 2. Canon ANELVA Corp (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.B-4-01

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