[B-4] Ferroelectric Memory Devices | 2024 International Conference on Solid State Devices and Materials

Advanced Search

Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-4]Ferroelectric Memory Devices

Tue. Sep 3, 2024 10:45 AM - 12:15 PM JST
Tue. Sep 3, 2024 1:45 AM - 3:15 AM UTC

Room B (408)(4th Floor)

Session Chair: Atsushi Himeno (Panasonic Holdings Corp.), Ming-Hsiu Lee (Macronix International Co., Ltd.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[B-4-01]High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

〇Nana Sun¹, Kazuki Okamoto¹, Shinnosuke Yasuoka¹, Soshun Doko², Naoko Matsui², Toshikazu Irisawa², Koji Tsunekawa², Hiroshi Funakubo¹ (1. Tokyo Tech (Japan), 2. Canon ANELVA Corp (Japan))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[B-4-02]Enhanced Ferroelectricity in HfO₂/ZrO₂ Superlattice Ferroelectric Capacitor with TiO₂ Seed Layer at Low-Temperature Annealing Process

〇Dongya Li^1,3, Huan Liu^1,2,3, Peiyuan Du¹, Fei Yu¹, Chengji Jin^1,3, Xiao Yu^1,2,3, Yan Liu¹, Yue Hao¹, Genquan Han^1,3 (1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University (China), 2. Research Center for Intelligent Chips (China), 3. Hangzhou Institute of Technology, Xidian University (China))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-4-03]Oxygen Dosage Adjusting in ALD Process for Highly-reliable and Fast Ferroelectric HZO Thin Film with a High Remanent Polarization

〇Yu-Chun Li¹, Zi-Ying Huang¹, Xiao-Na Zhu^1,2, David Wei Zhang^1,2, Hong-Liang Lu^1,2 (1. Fudan Univ. (China), 2. Zhangjiang Fudan Int’l Innovation Center (China))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-04]Optimization Strategies through Interfacial Layer Engineering in BEOL Ferroelectric Memory Devices for Diverse Applications

〇Tsung Ying Lin¹, Cheng Hung Wu², Chun Yung Chiu¹, William Cheng Yu Ma³, Vita Pi Ho Hu², Chun Jung Su^1,4 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. National Sun Yat-sen Univ. (Taiwan), 4. Taiwan Semiconductor Research Inst. (Taiwan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-4-05]Comparative Studies of Thermal Stability Between Back-End-of-Line Superlattice and Solid Solution Hf_0.5Zr_0.5O₂ Ferroelectric Memories on Ferroelectricity and Switching Dynamics

〇Cheng-Hung Wu¹, Tsung-Ying Lin², Chun-Jung Su^2,3, Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[B-4-06]50× Endurance Improvement for HfO₂-based Ferroelectric Capacitor Utilizing Hybrid Recovery Scheme

〇Zhuohua Tang^1,3, Wanwang Yang^1,3, Xujin Song^1,3, Haotong Zhu^1,3, Nan Tang^1,3, Haozhang Yang^1,3, Yulin Feng², Zheng Zhou^1,3, Jinfeng Kang^1,3, Peng Huang^1,3 (1. Peking Univ. (China), 2. Beijing Info. Sci. and Tech. Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))

Back to Category List