Presentation Information
[B-4-02]Enhanced Ferroelectricity in HfO2/ZrO2 Superlattice Ferroelectric Capacitor with TiO2 Seed Layer at Low-Temperature Annealing Process
〇Dongya Li1,3, Huan Liu1,2,3, Peiyuan Du1, Fei Yu1, Chengji Jin1,3, Xiao Yu1,2,3, Yan Liu1, Yue Hao1, Genquan Han1,3 (1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University (China), 2. Research Center for Intelligent Chips (China), 3. Hangzhou Institute of Technology, Xidian University (China))