2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-4-02]Enhanced Ferroelectricity in HfO2/ZrO2 Superlattice Ferroelectric Capacitor with TiO2 Seed Layer at Low-Temperature Annealing Process
〇Dongya Li1,3, Huan Liu1,2,3, Peiyuan Du1, Fei Yu1, Chengji Jin1,3, Xiao Yu1,2,3, Yan Liu1, Yue Hao1, Genquan Han1,3(1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University (China), 2. Research Center for Intelligent Chips (China), 3. Hangzhou Institute of Technology, Xidian University (China))
In this study, the influence of TiO2 seed layers in ferroelectric capacitors with HfZrOx (HZO) solid-solution and HfO2/ZrO2 superlattice structures has been explored. HfO2/ZrO2 superlattice structure exhibits well ferroelectricity at a low annealing temperature for crystallization below 300 oC. The back-end-of-line (BEOL) compatible HfO2/ZrO2 superlattice ferroelectric thin film with 1 nm TiO2 seed layer exhibits outstanding remnant polarization 2Pr ~ 51.4 µC/cm2 with low coercive field Ec of 0.9 MV/cm at 3 MV/cm, reduced the operating voltage to 1.2 V, and demonstrating stable endurance larger than 109 cycles.