2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[B-4-03]Oxygen Dosage Adjusting in ALD Process for Highly-reliable and Fast Ferroelectric HZO Thin Film with a High Remanent Polarization
〇Yu-Chun Li1, Zi-Ying Huang1, Xiao-Na Zhu1,2, David Wei Zhang1,2, Hong-Liang Lu1,2(1. Fudan Univ. (China), 2. Zhangjiang Fudan Int’l Innovation Center (China))
The ferroelectric (FE) capacitors featuring HZO films with different oxygen dose have been constructed by atomic layer deposition (ALD) to explore the oxygen dosage adjusting method to improve FE capacitor per-formance. Based on the switching-induced charge-injection model, utilizing controlled oxygen dos-age to tune the FE and dielectric properties at the metal /FE interface, the obtained device exhibits a high rema-nent polarization (28 μC/cm2) with a high endurance over 1010 cycles under 3 MV/cm loading and the capability of fast operation at sub-ns when scaling the device area to 20 μm2.