[B-4] Ferroelectric Memory Devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-4-03] Oxygen Dosage Adjusting in ALD Process for Highly-reliable and Fast Ferroelectric HZO Thin Film with a High Remanent Polarization

〇Yu-Chun Li¹, Zi-Ying Huang¹, Xiao-Na Zhu^1,2, David Wei Zhang^1,2, Hong-Liang Lu^1,2 (1. Fudan Univ. (China), 2. Zhangjiang Fudan Int’l Innovation Center (China))

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