[B-4] Ferroelectric Memory Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-4-04] Optimization Strategies through Interfacial Layer Engineering in BEOL Ferroelectric Memory Devices for Diverse Applications

〇Tsung Ying Lin¹, Cheng Hung Wu², Chun Yung Chiu¹, William Cheng Yu Ma³, Vita Pi Ho Hu², Chun Jung Su^1,4 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. National Sun Yat-sen Univ. (Taiwan), 4. Taiwan Semiconductor Research Inst. (Taiwan))

DOI:

https://doi.org/10.7567/SSDM.2024.B-4-04

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