[B-6] 3D NAND Flash Memory

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[B-6-05] A Novel Structure Using P-doped Polysilicon in IGZO Channel-based 3D NAND Flash

Daewoong Kang¹, 〇Minkyo Suh^1,2, Gwansun Choi^1,2, Chaeyeon Jung^1,3, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil University (Korea), 4. Daegu University (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.B-6-05

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