[B-6] 3D NAND Flash Memory | 2024 International Conference on Solid State Devices and Materials

Advanced Search

Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-6]3D NAND Flash Memory

Wed. Sep 4, 2024 10:45 AM - 12:15 PM JST
Wed. Sep 4, 2024 1:45 AM - 3:15 AM UTC

Room B (408)(4th Floor)

Session Chair: Ken Takeuchi (The Univ. of Tokyo), Keiji Hosotani (KIOXIA Corp.)

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)Invited

[B-6-01 (Invited)]Metal Induced Lateral Crystallization (MILC) Techniques for Highly Scalable Vertical Si Channel in 3D Flash Memory

〇Noritaka Ishihara¹, Yusuke Shimada¹, Takamitsu Ochi¹, Satoshi Seto¹, Haruki Matsuo¹, Hiroki Yamashita¹, Sho Morita¹, Masafumi Ukishima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Katsuya Nishiyama¹, Akiyuki Murayama¹, Kikuko Sugimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Aki Maeda¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Makoto Fujiwara¹, Fumiki Aiso¹, Katsuyuki Sekine¹, Norio Ohtani¹ (1. Kioxia Corporation (Japan), 2. Western Digital Corporation (Japan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[B-6-02]Optical Emission Spectrum Feature-based Machine Learning Technology for Monitoring High Aspect Ratio Contact Etching-induced Defects of 3D NAND Flash Memory

〇Byung Yong Choi¹, Gae-won You¹, Deokwon Sim¹, Jongik Hong¹, Hyun Soo Lee¹, Jonghyun Kim¹, Sangwon Baek¹, Won Jun Choi¹, Minsun Ryu¹, Seungyoon Kim¹, Hoyun Jung¹, Jun Haeng Lee¹, Sung-Il Cho¹, Mincheol Park¹, Bong-Tae Park¹, Sung Hoi Hur¹ (1. Samsung Electronics Co., Ltd. (Korea))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[B-6-03]Analysis of Mechanical Stress Induced in Multi-Stack and Number of Wordlines of 3D NAND Flash Memory

〇Donghyun Kim¹, Kihoon Nam¹, Chanyang Park¹, Jiyoon Kim¹, Jinsu Jung¹, Sanguk Lee¹, Yunsu Kim², Seongjo Park², Rock-Hyun Baek¹ (1. Pohang Univ. of Science and Technology (Korea), 2. SK hynix Inc. (Korea))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[B-6-04]First Demonstration of 3D Stacked FeFET Memory Devices with Vertical IGZO Channel-Last Process for Dense Non-Volatile Memory

〇Roman Izmailov^1,2, Nicolò Ronchi¹, Jie Li¹, Mihaela Ioana Popovici¹, Kostantine Katcko¹, Zhuo Chen^1,2, Laurent Breuil¹, Nina Bazzazian¹, Kaustuv Banerjee¹, Iuliana Rachita¹, Geert Van den bosch¹, Maarten Rosmeulen¹, Jan Van Houdt^1,2 (1. imec (Belgium), 2. KU Leuven (Belgium))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[B-6-05]A Novel Structure Using P-doped Polysilicon in IGZO Channel-based 3D NAND Flash

Daewoong Kang¹, 〇Minkyo Suh^1,2, Gwansun Choi^1,2, Chaeyeon Jung^1,3, Youngho Jung⁴ (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil University (Korea), 4. Daegu University (Korea))

Back to Category List