[B-7] ReRAM, PCRAM, and FeRAM

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[B-7-02] Metal Doping and Interface Effects on Oxygen Vacancy Properties of HfO₂-based RRAM: A First-principles Computational Study

Di Wu¹, 〇Pengpeng Sang¹, Wei Wei², Lu Tai¹, Jixuan Wu¹, Xuepeng Zhan¹, Jiezhi Chen¹ (1. Shandong University (China), 2. Institute of Microelectronics of Chinese Academy of Sciences (China))

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