2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-7]ReRAM, PCRAM, and FeRAM

Wed. Sep 4, 2024 1:30 PM - 2:45 PM JST
Wed. Sep 4, 2024 4:30 AM - 5:45 AM UTC
Room B (408)(4th Floor)
Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.), Yoshihiro Sato (Tohoku Univ.)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[B-7-01]Resistive Switching Element scaling toward 22nm embedded ReRAM and beyond

〇Masahiro Morimoto1, Shunsaku Muraoka1, Satoshi Awamura1, Ken Kawai1, Norio Hattori1, Satoru Ito1, Shinichi Yoneda1 (1. Nuvoton Technology Corp. Japan (Japan))
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[B-7-02]Metal Doping and Interface Effects on Oxygen Vacancy Properties of HfO2-based RRAM: A First-principles Computational Study

Di Wu1, 〇Pengpeng Sang1, Wei Wei2, Lu Tai1, Jixuan Wu1, Xuepeng Zhan1, Jiezhi Chen1 (1. Shandong University (China), 2. Institute of Microelectronics of Chinese Academy of Sciences (China))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[B-7-03]Room temperature produced chalcogenide superlattices on 300 mm wafer for interfacial phase-change memory

〇Yusuke Miyaguchi1, Kazumasa Horita1, Takehito Jimbo1, Takeshi Masuda1, Shutaro Asanuma2, Noriyuki Miyata2, Junji Tominaga2 (1. ULVAC, Inc. (Japan), 2. AIST (Japan))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[B-7-04]Evaluation of Low-Voltage 2T-nC FeRAM considering Write Disturb

〇Yi-Chuan Chen1, Po-Yi Lee1, Kuo-Yu Hsiang1,2, Ming-Hung Lee2, Pin Su1 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[B-7-05]Recovery Strategies and Related Mechanisms to Overcome Fatigue-Limited Endurance on HZO-based FeCAP and FeRAM Arrays

〇Julie Laguerre1,2, Simon Martin1, Liam Hosier1, Jean Coignus1, Catherine Carabasse1, Marc Bocquet2, François Andrieu1, Laurent Grenouillet1 (1. CEA-Leti (France), 2. Aix-Marseille Univ. (France))
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