[B-8] Ferroelectric FET

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[B-8-03] Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency

〇Ming-Chieh Chiang¹, Yi-Fan Chen¹, Kai-Yang Huang¹, Chun-Yi Kuo¹, Yung-Hsien Wu¹ (1. National Tsing Hua Univ. (Taiwan))

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