Session Details
[B-8]Ferroelectric FET
Wed. Sep 4, 2024 3:15 PM - 4:30 PM JST
Wed. Sep 4, 2024 6:15 AM - 7:30 AM UTC
Wed. Sep 4, 2024 6:15 AM - 7:30 AM UTC
Room B (408)(4th Floor)
Session Chair: E Ray Hsieh (National Central Univ.), Laurent Grenouillet (CEA-Leti)
[B-8-01]A Novel Measurement Method to Extract Relationship Between Threshold Voltage and Polarization for Understanding FeFET Memory Operation
〇Seong-Kun Cho1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1. The Univ. of Tokyo (Japan))
[B-8-02]Investigation of Endurance Characteristics of AFeFET: Electrical and Thermal Fatigue Phenomenon
〇Min Liao1, Xianzhou Shao1, Hao Xu1, Junshuai Chai1, Xiaoqing Sun1, Xiaoyu Ke1, Jinjuan Xiang2, Xiaolei Wang1, Wenwu Wang1 (1. Inst. of Microelectronics Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Tech. (China))
[B-8-03]Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer with Low Operating Voltage, Large Memory Window and Negligible Read Latency
〇Ming-Chieh Chiang1, Yi-Fan Chen1, Kai-Yang Huang1, Chun-Yi Kuo1, Yung-Hsien Wu1 (1. National Tsing Hua Univ. (Taiwan))
[B-8-04]Integration of Phase Change (Ge2Sb2Te5) Liner Stressor on Ferroelectric Capacitors and FeFETs: Simulation and Electrical Characterization
〇Yaxuan Yuan1, Xueyang Li1, Xinze Li1, Bing Chen2, Dawei Gao3, Genquan Han2, Ran Cheng1 (1. The Univ. of Zhejiang (China), 2. The Univ. of Xidian (China), 3. The Corp. of Zhejiang ICsprout Semiconductor (China))
[B-8-05 (Late News)]Implementation of Ge N-channel FeFET Memory with Al2O3/AlN Interfacial Layer by Microwave Annealing
〇Yu-Hsing Chen1, Sheng-Yen Zheng1, Yung-Hsien Wu1 (1. National Tsing Hua University (Taiwan))