[D-1] Ga2O3 Power Devices

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[D-1-02] Demonstration of β-(Al_0.17Ga_0.83)₂O₃ metal-semiconductor field-effect transistors with low contacts resistance and high drain current density

〇Ryo Morita¹, Aboulaye Traore^1,2, Hironori Okumura¹, Fenfen Fenda Florena¹, Yun Jia¹, Takeaki Sakurai¹ (1. Univ. of Tsukuba (Japan), 2. J-FAST (Japan))

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