Presentation Information
[D-1-02]Demonstration of β-(Al0.17Ga0.83)2O3 metal-semiconductor field-effect transistors with low contacts resistance and high drain current density
〇Ryo Morita1, Aboulaye Traore1,2, Hironori Okumura1, Fenfen Fenda Florena1, Yun Jia1, Takeaki Sakurai1 (1. Univ. of Tsukuba (Japan), 2. J-FAST (Japan))